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Indium phosphide

Indium phosphide (InP) is a semiconductor composed of indium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.

Properties
General
NameIndium phosphide
Chemical FormulaInP
AppearanceDark gray cubic crystals
Structure
Formula weight145.79 amu
Lattice constant 0.58687 nm
Crystal structureZincblende
Physical
State of matter at STPsolid
Melting point at SP1333 K
Boiling point at SP?
Specific gravity4.81
Electronic
Band gap at 300K1.344 eV
Electron effective mass0.073 me
Hole effective mass0.64 me
Electron mobility at 300 K0.46 m2/V·s
Hole mobility at 300 K0.015 m2/V·s
Precautions
Toxic?
Decompostion products?
SI units were used where possible.

Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.

The Sellmeier equation that describes how the optical refractive index for indium phosphide depends on wavelength is given by:

n^2(\lambda) = 1  + 7.255 + \frac{2.316 \lambda^2 }{ \lambda^2 - 0.6263^2} + \frac{2.765 \lambda^2 }{ \lambda^2 - 32.935^2}

where λ is the wavelength in micrometres.

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